VFTO 空间场对腔体耦合试验研究*

采用基于时域有限差分法(FDTD)的电磁仿真软件,建立了在VFTO空间辐射场下的二次设备外壳仿真模型,分析了该外壳内不同开孔及孔阵部位耦合场特性。然后通过现场测试,研究了在1000k V GIS变电站中,VFTO空间场辐射下的二次设备内耦合场特性。结果表明:二次设备外壳上的孔阵及缝隙阵对VFTO空间场辐射有明显的抑制作用,且耦合场在腔体内的持续时间要明显大于VFTO空间场在自由空间中的持续时间;二次设备内的PCB板对腔体内的耦合场有一定的抑制作用,因而当腔体内存在PCB时,腔体内耦合场幅值将比空腔时要小,同时由于介质板对高频振荡的抑制作用,耦合场的持续振荡时间也会有所缩短,且发现腔体内的PCB会改变原有空腔内耦合场的主频分布。

Experiment Study of Coupling Characteristics of Cavity under VFTO Space Field

In this paper, secondary equipment shell model is established under VFTO space field for simulation analysis coupling field features of the different hole and the aperture array base on finite difference time domain method(FDTD). Through the test, the coupling field features of secondary equipment under VFTO space field in the 1000kV GIS are studied Results show that hole array and aperture array of the equipment shell has obvious inhibitory effect in VFTO space field, and in the duration of the coupling field cavity in the body to be significantly greater than VFTO duration in space field in free space. Secondary equipment with the PCB has certain inhibitionto the cavity coupling field in the body, and high frequency oscillation due to the dielectric slabs inhibitory effect at the same time, the coupling oscillation duration will be shorter, and found that the cavity in the body of the PCB will change the frequency distribution of original coupling field inside the cavity.