| As在Co/Ti/Si三元固相反应中的分凝效应 |
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| 引用本文： | 刘平,周祖尧,林成鲁,邹世昌,李炳宗,孙臻.As在Co/Ti/Si三元固相反应中的分凝效应[J].物理学报,1993,42(11):1800-1805. |
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| 作者姓名： | 刘平 周祖尧 林成鲁 邹世昌 李炳宗 孙臻 |
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| 作者单位： | (1)复旦大学电子工程系,上海200433; (2)中国科学院上海冶金研究所离子束开放研究实验室,上海200050 |
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| 摘 要： | 在注入As的Si表面上,采用离子束溅射淀积Co/Ti双层金属膜。在氮气氛下对Co/Ti/Si进行多步热处理,研究As原子在Co/Ti/Si三元固相反应过程中的行为。实验采用背散射技术测量As原子在反应各阶段中的分布。结果表明,随着反应形成TiN(O)/Co-Ti-Si/CoSi2/Si多层薄膜结构,一部分Si衬底中的As原子被分凝出来,向表面运动,并聚集在Co-Ti-Si三元硅化物中。对As原子的这一再分布行为进行了讨论。
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| 关 键 词： | 固相反应 砷 分凝 硅化物 |
| 收稿时间： | 1993-02-22 |
SEGREGATION OF ARSENIC DURING THE SOLID STATE REACTION OF TERNARY Co/Ti/Si SYSTEM |
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| LIU PING,ZHOU ZU-YAO,LIN CHENG-LU,ZOU SHI-CHANG,LI BING-ZONG and SUN ZHEN.SEGREGATION OF ARSENIC DURING THE SOLID STATE REACTION OF TERNARY Co/Ti/Si SYSTEM[J].Acta Physica Sinica,1993,42(11):1800-1805. |
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| Authors: | LIU PING ZHOU ZU-YAO LIN CHENG-LU ZOU SHI-CHANG LI BING-ZONG and SUN ZHEN |
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| Abstract: | The bimetallic layers of Co/Ti were deposited by ion beam sputtering on silicon implanted with arsenic. The sample of Co/Ti/Si was treated by a multi-step annealing under nitrogen ambient. The behaviuor of arsenic during the reaction of ternary Co/Ti/Si system was studied by Rutherford backscattering sepctrometry (RBS). The results show that a multi-layer structure of TiN(O)/Co-Ti-Si/CoSi2/Si was formed by the reaction and a number of arsenic atoms were segregated from silicon substrate to the interlayer of Co-Ti-Si compound. |
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