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一种有效的3D存储器内建自修复方案
引用本文:姚瑶,梁华国,应健锋,倪天明,易茂祥,黄正峰.一种有效的3D存储器内建自修复方案[J].微电子学,2019,49(5):690-696.
作者姓名:姚瑶  梁华国  应健锋  倪天明  易茂祥  黄正峰
作者单位:合肥工业大学 电子科学与应用物理学院, 合肥230009,合肥工业大学 电子科学与应用物理学院, 合肥230009,合肥工业大学 电子科学与应用物理学院, 合肥230009,安徽工程大学 电气工程学院, 安徽 芜湖 241000,合肥工业大学 电子科学与应用物理学院, 合肥230009,合肥工业大学 电子科学与应用物理学院, 合肥230009
基金项目:国家自然科学基金资助项目(61674048,61574052);电子测试技术重点实验室开放基金项目(61420010202717);安徽工程大学科研启动基金资助项目(2018YQQ007)
摘    要:与2D存储器相比,3D存储器能够提供更大的容量、更高的带宽、更低的延迟和功耗,但成品率低。为了解决这个问题,提出一种有效的3D存储器内建自修复方案。将存储阵列的每一行或每一列划分成几个行块或列块,在不同层的行块或列块之间进行故障单元的映射,使不同层同一行或同一列的故障在逻辑上映射到同一层中,从而使一个冗余行或冗余列能够修复更多的故障,大大增加了冗余资源利用率和故障修复率。实验结果表明,与其他修复方案相比,该方案的修复率更高,实现相同修复率所需的冗余资源更少,增加的面积开销几乎可忽略不计。

关 键 词:3D存储器    成品率    内建自修复    行块  列块    修复率
收稿时间:2018/12/18 0:00:00

An Effective Built-in Self-Repair Scheme for 3D Memory
YAO Yao,LIANG Huaguo,YING Jianfeng,NI Tianming,YI Maoxiang and HUANG Zhengfeng.An Effective Built-in Self-Repair Scheme for 3D Memory[J].Microelectronics,2019,49(5):690-696.
Authors:YAO Yao  LIANG Huaguo  YING Jianfeng  NI Tianming  YI Maoxiang and HUANG Zhengfeng
Institution:School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, P.R.China,School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, P.R.China,School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, P.R.China,School of Electrical Engineering, An-Hui Engineering University, Wuhu, Anhui 241000, P.R.China,School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, P.R.China and School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, P.R.China
Abstract:Compared with 2D memory, 3D memory has larger storage capacity, higher bandwidth, lower delay, and lower power consumption. But low yield is always a major challenge for three-dimensional memory manufacturing. To address the problem, an effective built-in self-repair scheme for 3D memory was proposed. This scheme divided each row/column of a memory array into several row/column blocks, and fault mapping was performed among row/column blocks of different layers, so that the faults that located in the same row/column of different layers could be mapped into the same layer. As a result, one redundant row or redundant column could repair more faults, which had greatly improved the utilization of redundancy and repair rate. Experimental results showed that compared with other repair schemes, the proposed method had a higher repair rate and required less redundant resources to achieve the same yield, and the increased area overhead was almost negligible.
Keywords:3D memory  yield  built-in self-repair  row block  column block  repair rate
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