| 钝化层退火工艺引入的氢对P-Flash存储器耐久性的影响 |
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| 引用本文： | 朱梦华,余山,陈勇,潘晶,毛海央.钝化层退火工艺引入的氢对P-Flash存储器耐久性的影响[J].微电子学,2019,49(4):568-573. |
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| 作者姓名： | 朱梦华 余山 陈勇 潘晶 毛海央 |
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| 作者单位： | 中国科学院大学 微电子学院, 北京 100029,中芯国际集成电路制造有限公司, 北京 100176,中芯国际集成电路制造有限公司, 北京 100176,中芯国际集成电路制造有限公司, 北京 100176,中国科学院大学 微电子学院, 北京 100029 |
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| 基金项目： | 国家自然科学基金资助项目(61771467)；中国科学院青年创新促进基金资助项目(2018153) |
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| 摘 要： | 研究了钝化层退火工艺引入的氢对P-Flash存储器耐久性的影响,建立了这一影响的物理模型,阐明了耐久性退化的机理。在四种不同测试条件下,对P-Flash存储器进行了编程/擦除的耐久性测试。测试结果表明,在高温且延时的条件下,器件的耐久性最差。耐久性与编程/擦除之间的延时相关,延时越长,耐久性衰减越严重。在器件编程后的延时过程中,SiO2/Si界面处被氢原子钝化的硅悬挂键发生断裂。氢原子的不稳定性导致更多的界面陷阱电荷和氧化层电荷的产生,使得阈值电压负向偏移,造成负偏压温度的不稳定。通过优化BEOL工艺,可有效改善P-Flash存储器的耐久性。
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| 关 键 词： | P-Flash存储器 氢原子 硅悬挂键 耐久性 |
| 收稿时间： | 2018/10/21 0:00:00 |
Impact of Hydrogen From Passivation Anneal Process on Endurance of P-Flash Memory |
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| ZHU Menghu,YU Shan,CHEN Yong,PAN Jing and MAO Haiyang.Impact of Hydrogen From Passivation Anneal Process on Endurance of P-Flash Memory[J].Microelectronics,2019,49(4):568-573. |
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| Authors: | ZHU Menghu YU Shan CHEN Yong PAN Jing and MAO Haiyang |
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| Institution: | School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100029, P.R.China,Semiconductor Manufacturing International Corporation, Beijing 100176, P.R.China,Semiconductor Manufacturing International Corporation, Beijing 100176, P.R.China,Semiconductor Manufacturing International Corporation, Beijing 100176, P.R.China and School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100029, P.R.China |
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| Abstract: | The effect of hydrogen atom introduced by passivation layer annealing process on the endurance of P-Flash was studied. The physical model of this effect was established, and the mechanism of endurance degradation was clarified. Programming/erasing endurance of P-Flash was measured under four different test conditions. The test results showed that the endurance of the device was the worst under the condition of high temperature and delay. Endurance was related to the delay time between programming/erasing, and the endurance was getting more degraded with more delay time. The silicon dangling bond passivated by hydrogen atom at the SiO2/Si interface was broken during delay time after programming. More interface trap charges and oxide charges would be generated due to instability of hydrogen atom, which in turn caused a negative shift of threshold voltage, and caused negative bias temperature instability. By optimizing the BEOL process, the endurance of P-Flash could be effectively improved. |
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