| 碳掺杂对28 nm PMOS器件性能的影响 |
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| 引用本文： | 吉忠浩,阎大勇,龙世兵,薛景星,徐广伟,肖印长,娄世殊. 碳掺杂对28 nm PMOS器件性能的影响[J]. 微电子学, 2019, 49(1): 136-139, 145 |
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| 作者姓名： | 吉忠浩 阎大勇 龙世兵 薛景星 徐广伟 肖印长 娄世殊 |
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| 作者单位： | 中国科学院大学 微电子学院, 北京 100029,中芯国际集成电路制造有限公司, 北京 100176,中国科学院大学 微电子学院, 北京 100029,中芯国际集成电路制造有限公司, 北京 100176,中芯国际集成电路制造有限公司, 北京 100176,中芯国际集成电路制造有限公司, 北京 100176,中芯国际集成电路制造有限公司, 北京 100176 |
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| 基金项目： | 国家自然科学基金资助项目(61521064,61322408)；国家重点研发计划资助项目(2016YFA0201803)；中国科学院前沿科学重点研究项目(QYZDB-SSW-JSC048)；中国科学院微电子器件与集成技术重点实验室课题基金项目 |
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| 摘 要： | 基于28 nm Polysion工艺,研究了在轻掺杂源漏区(LDD)提升掺杂浓度与掺杂碳源对PMOS器件的影响。实验结果表明,掺杂碳原子可以有效抑制硼的瞬时增强扩散效应(TED),并有效降低器件结深,降低漏电流。在P型轻掺杂源漏区(PLDD)提升掺杂浓度,可以有效提高电路速度,但会导致更严重的硼扩散与漏电流。通过研究不同浓度的碳原子与PLDD浓度对器件的影响,选取合适的碳源掺杂浓度并提高PLDD的掺杂浓度,在同样饱和电流的情况下器件具有更小的漏电流,可以提升PMOS器件的饱和电流与漏电流(Ion-Ioff)性能约6%。
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| 关 键 词： | 28 nm 碳掺杂 PLDD掺杂浓度 PMOS器件 |
| 收稿时间： | 2018-04-09 |
Influence of Carbon Implantation on 28 nm PMOS Device Performance |
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| JI Zhonghao,YAN Dayong,LONG Shibing,XUE Jingxing,XU Guangwei,XIAO Yinzhang and LOU Shishu. Influence of Carbon Implantation on 28 nm PMOS Device Performance[J]. Microelectronics, 2019, 49(1): 136-139, 145 |
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| Authors: | JI Zhonghao YAN Dayong LONG Shibing XUE Jingxing XU Guangwei XIAO Yinzhang LOU Shishu |
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| Affiliation: | School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100029, P.R.China,Semiconductor Manufacturing International Corporation, Beijing 100176, P.R.China,School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100029, P.R.China,Semiconductor Manufacturing International Corporation, Beijing 100176, P.R.China,Semiconductor Manufacturing International Corporation, Beijing 100176, P.R.China,Semiconductor Manufacturing International Corporation, Beijing 100176, P.R.China and Semiconductor Manufacturing International Corporation, Beijing 100176, P.R.China |
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| Abstract: | The impact of carbon implantation on PLDD area in 28 nm Polysion PMOS device had been investigated by experiments from semiconductor foundry. Experimental results showed that carbon could be used as co-implantation due to its highly effective mechanism of depressing Transient Enhanced Diffusion(TED), junction depth reduction and leakage current decreasing. Higher dosage on PLDD could improve the circuit speed, but would result in serious boron diffusion and leakage current. The impacts on device performances by different dosage of carbon and PLDD implantation were studied. It got a higher saturated current in a lower leakage current, which improved the PMOS device performance of saturated current and leakage current(Ion-Ioff) by 6% by choosing the appropriate dosage. |
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| Keywords: | 28 nm carbon implantation PLDD dosage PMOS device |
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