Positron-lifetime study of vacancy annealing in neutron-irradiated GaAs |
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| Authors: | G Dlubek R Krause O Brümmer J Tittes |
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| Institution: | (1) Sektion Physik, Martin-Luther-Universität, Friedemann-Bach-Platz 6, DDR-4020 Halle, German Dem. Rep. |
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| Abstract: | Positron-lifetime measurements have been used to study the annealing of vacancies in neutron-irradiated GaAs. The vacancies which are interpreted as defects in the Ga sublattice disappear in a single annealing stage (at 500°C in GaAs doped with Si or Zn, and at 600°C in Cr-doped GaAs). |
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| Keywords: | 61 80 78 70 |
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