Photoluminescence of single crystals of cadmium diarsenide |
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| Authors: | A. V. Mudryi A. I. Patuk V. M. Trukhan I. A. Shakin S. F. Marenkin |
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| Affiliation: | (1) Institute of Solid-State and Semiconductor Physics, National Academy of Sciences of Belarus, 17, P. Brovka St., 220072 Minsk, Belarus;(2) N. S. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Moscow |
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| Abstract: | An investigation is made of the low-temperature (4.2–78 K) photoluminescence of single crystals of cadmium diarsenide grown from the gas phase and by the Bridgman method. Radiation near the fundamental absorption edge is detected, which is attributed to annihilation of free excitons with simultaneous emission of phonons (the lines 1.0029 and 0.9840 eV at 4.2 K). The optical width of the forbidden band is estimated at 4.2 K. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 1, pp. 149–152, January–February, 1998. |
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| Keywords: | cadmium diarsenide luminescence excitons impurities |
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