| 超薄氧化层的电击穿特性 |
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| 引用本文： | 于宗光,黄卫. 超薄氧化层的电击穿特性[J]. 微电子技术, 1999, 0(1) |
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| 作者姓名： | 于宗光 黄卫 |
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| 作者单位： | 中国华晶电子集团公司中央研究所!无锡，214035 |
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| 基金项目： | 江苏省青年科技基金!BQ96040 |
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| 摘 要： | 本文在测试分析N 理层—隧道氧化层一多晶硅电容（N OP电容）、P衬底一隧道氧化层一多晶硅电容（POP电容）和EEPROM单元隧道氧化层电容（TOP电容）的I－V特性、I－t特性、V－t特性的基础上，对隧道氧化层的击穿特性进行了理论分析，并提出了提高隧道氧化层可靠性的具体措施。
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| 关 键 词： | 隧道氧化层 击穿 可靠性 |
Electrical Breakdown Characteristics of Thin Films of SiO_2 |
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| Yu zongguang, Huang Wei. Electrical Breakdown Characteristics of Thin Films of SiO_2[J]. Microelectronic Technology, 1999, 0(1) |
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| Authors: | Yu zongguang Huang Wei |
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| Affiliation: | Central Research Institute of china Huajing Electronic Group Corp. |
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| Abstract: | In this paper, Based on the test and analysis of I - V, V - t, and I - t characteristics of N buried layer - tunnel otide - polysilicon capacitor, P substrate - tunnel okide-polysilicon capacitor and tunnel oxide capacitor in EEPROMs, the breakdown characteristics of tunnel oxide are studied theoretically. Metheds to improve the reliability of tunnel oxide are discussed. |
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| Keywords: | Tunnel Oxide Breakdown Reliability |
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