Polaron and ion diffusion in a poly(3-hexylthiophene) thin-film transistor gated with polymer electrolyte dielectric |
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Authors: | T Mills L G Kaake and X-Y Zhu |
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Institution: | (1) Department of Chemistry, University of Minnesota, Minneapolis, MN 55455, USA |
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Abstract: | Electrolytes are finding applications as dielectric materials in low-voltage organic thin-film transistors (OTFT). The presence
of mobile ions in these materials (polymer electrolytes or ion gels) gives rise to very high capacitance (>10 μF/cm2) and thus low transistor turn-on voltage. In order to establish fundamental limits in switching speeds of electrolyte gated
OFETs, we carry out in situ optical spectroscopy measurement of a poly(3-hexylthiophene) (P3HT) OTFT gated with a LiClO4:poly(ethyleneoxide) (PEO) dielectric. Based on spectroscopic signatures of molecular vibrations and polaron transitions,
we quantitatively determine charge carrier concentration and diffusion constants. We find two distinctively different regions:
at V
G≥−1.5 V, drift-diffusion (parallel to the semiconductor/dielectric interface) of hole-polarons in P3HT controls charging of
the device; at V
G<−1.5 V, electrochemical doping of the entire P3HT film occurs and charging is controlled by drift/diffusion (perpendicular
to the interface) of ClO4
− counter ions into the polymer semiconductor. |
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Keywords: | PACS" target="_blank">PACS 85 30 Tv 82 35 Rs 66 30 Hs 82 45 Gj 72 80 Le |
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