Overhauser shift of the electron spin-resonance line of Si:P at the metal-insulator transition: II.
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Si contribution |
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Authors: | U Fasol E Dormann |
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Institution: | Physikalisches Institut, Universit?t Karlsruhe (TH), 76128 Karlsruhe, Germany, DE
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Abstract: | The electron-spin resonance (ESR) line of delocalised electrons shifts upon saturation due to the hyperfine interaction with
the dynamically polarized nuclear spins. The
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Si part of the Overhauser shift of the ESR line of phosphorus doped silicon (Si:P) is separated in the concentration range 2.7
... 7.3×10
18
/
cm
3
covering the metal-insulator transition. The Overhauser shift profiles, recorded versus
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Si nuclear magnetic resonance (NMR) frequency, are asymmetric. Their dependence on temperature and ESR saturation compares reasonably
with simulations. Time and NMR frequency dependence of the dynamic nuclear polarization is studied in detail. No pronounced
variation of the
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Si Overhauser shift profiles with P concentration is observed, but the maximum value of the shift profile decreases with increasing
P concentration. In contrast to standard
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Si NMR results, these measurements reveal the behaviour of the
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Si nuclei close to the P doping sites.
Received 8 November 2001 |
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Keywords: | PACS 76 70 -r Magnetic double resonances and cross effects – 71 30 +h Metal-insulator transitions and other electronic transitions |
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