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STM中量子点接触的电导计算
引用本文:李钱光,许海霞,李翌,李志扬. STM中量子点接触的电导计算[J]. 物理学报, 2005, 54(11): 5251-5256
作者姓名:李钱光  许海霞  李翌  李志扬
作者单位:华中师范大学物理科学与技术学院,武汉 430079
基金项目:国家教育部重点项目(批准号:104120)和校基金资助的课题.
摘    要:采用模式匹配和散射矩阵方法,对扫描隧道显微镜(STM)中量子点接触过程中的电导进行了计算.结果表明由量子点接触形成的纳米结构的电导呈现量子化特征,这种量子化现象随所形成的纳米结构的横向尺寸和锥角的减小而增强.而且在半导体材料中比金属中更易观察到电导量子化现象.关键词:STM量子点接触量子化电导

关 键 词:STM  量子点接触  量子化电导
文章编号:1000-3290/2005/54(11)/5251-06
收稿时间:2005-02-07
修稿时间:2005-02-072005-03-21

Calculation of conductance of quantum point contact in STM
Li Qian-Guang,Xu Hai-Xia,Li Yi,Li Zhi-Yang. Calculation of conductance of quantum point contact in STM[J]. Acta Physica Sinica, 2005, 54(11): 5251-5256
Authors:Li Qian-Guang  Xu Hai-Xia  Li Yi  Li Zhi-Yang
Affiliation:College of Physical Science and Technology, Central China Normal University, Wuhan 430079, China
Abstract:The conductance of quantum point contact in scanning tunneling microscope is calculated by modal matching and scattering matrix method. The results show that the conductance of the nano-structure formed during quantum point contact in STM is quantized, which becomes more obvious as the radius and cone angle of the nano-structure decreases. The quantitative behavior could be observed more easily with semiconductors than with metals.
Keywords:STM   quantum point contact   quantum conductance
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