Monte Carlo simulations of GaN cold cathodes

Ensemble Monte Carlo simulations of electron transport through a new aluminum gallium nitride/gallium nitride (AlGaN/GaN) cold cathode emitter are reported. We analyze the energy spectrum of carriers prior to being injected into a low work function slab of Lanthanum Hexaboride (LaB₆) as a function of the ramp energy of the carriers at the AlGaN/GaN heterojunction. Plasmon scattering is shown to be the major scattering mechanism in the structure leading to substantial shift towards the low kinetic energy end of the energy spectrum of the carriers injected into the low work function Lanthanum Hexaboride thin film. Intervalley scattering is found to dominate in the depletion layer at the GaN/LaB₆interface. Design improvements to increase the efficiency of the cold cathode are suggested.