| 硅衬底上BSCCO高温超导材料的制备 |
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| 引用本文： | 于宗光,钱文生.硅衬底上BSCCO高温超导材料的制备[J].半导体技术,2000(4):40-46. |
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| 作者姓名： | 于宗光 钱文生 |
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| 作者单位： | [1]无锡微电子科研中心 [2]东南大学微电子中心 |
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| 摘 要： | 研究了采用单靶控溅射在Ｓｉ（１００）衬底上生长ＹＳＺ（钇稳定的ＺｒＯ２）ＢＳＣＣＯ（铋锶钙铜氧）薄膜的工艺条件，包括生长温度，生长气氛，生长速率及氧化退化等。还研究了高温超导相的形成与生长温度的关系，并获得了超导膜临界温度为８２Ｋ的ＢＳＣＣＯ／ＹＳＺ／Ｓｉ兼容材料。
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| 关 键 词： | 高温超导膜 BSCCO 硅衬底 |
Preparing of BSCCO /Si High-Tc Superconductor Films |
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| Yu Zongguang.Preparing of BSCCO /Si High-Tc Superconductor Films[J].Semiconductor Technology,2000(4):40-46. |
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| Authors: | Yu Zongguang |
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| Abstract: | The process parameters of preparing YSZ and BSCCO superconducting films on Si (100) by single target rf magnetron sputtering,such as temperature, sputtering atmosphere, deposition rate and the conditions of annealing are studied. The dependence of high Tc phases on growing temperatures is emphatically studied. The critical temperature of BSCCO/YSZ/ Si film is 82K. |
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| Keywords: | High Tc superconducting films BSCCO YSZ Sputtering Buffer layer |
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