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Field plate structural optimization for enhancing the power gain of GaN-based HEMTs
Authors:Zhang Kai  Cao Meng-Yi  Lei Xiao-Yi  Zhao Sheng-Lei  Yang Li-Yuan  Zheng Xue-Feng  Ma Xiao-Hua  and Hao Yue
Affiliation:( a) Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi 'an 710071, China b) School of Technical Physics, Xidian University, Xi'an 710071, China)
Abstract:GaN-based HEMTs, breakdown characteristics, field plates, power gain
Keywords:GaN-based HEMTs   breakdown characteristics   field plates   power gain
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