Dislocation glide in GaN films grown by the lateral-overgrowth method induced by low-energy electron-beam irradiation |
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Authors: | E. B. Yakimov P. S. Vergeles |
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Affiliation: | 1.Institute of Microelectronics Technology and High Purity Materials,Russian Academy of Sciences,Chernogolovka, Moscow oblast,Russia |
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Abstract: | The effect of irradiation on the dislocation structure of epitaxial GaN films, grown by the lateral-overgrowth method, is studied using the electron-beam-induced current mode in a scanning electron microscope. Low-energy electron-beam irradiation is found to lead to the gliding basal-plane dislocations even at very low excitation levels. Changes in the relative contrast of two segments of adjacent basal-plane dislocations may also indicate dislocation movement in the prismatic planes. |
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