| Turn-on Delay of Semiconductor Lasers and Accompanying Time Evolution of Carriers |
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| 引用本文： | WANG Jialing (Department for Basic Education,Heilongjiang Commercial College,Harbin 150076,China)CHEN Jianguo (Department of Optoelectronics,Sichuan University,Chengdu 610064,China). Turn-on Delay of Semiconductor Lasers and Accompanying Time Evolution of Carriers[J]. Chinese Journal of Lasers, 1998, 7(4): 308-312 |
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| 作者姓名： | WANG Jialing (Department for Basic Education Heilongjiang Commercial College Harbin 150076 China)CHEN Jianguo (Department of Optoelectronics Sichuan University Chengdu 610064 China) |
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| 作者单位： | WANG Jialing (Department for Basic Education，Heilongjiang Commercial College，Harbin 150076，China)CHEN Jianguo (Department of Optoelectronics，Sichuan University，Chengdu 610064，China) |
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| 摘 要： | １ＩｎｔｒｏｄｕｃｔｉｏｎＩｔｉｓｗｅｌｋｎｏｗｎｔｈａｔａｃｅｒｔａｉｎｔｉｍｅｉｓｎｅｄｅｄｆｏｒｔｈｅｃａｒｉｅｒｄｅｎｓｉｔｙｎｔｏｒｅａｃｈｔｈｅｔｈｒｅｓｈｏｌｄｖａｌｕｅｎｔｈｗｈｅｎｔｈｅｂｉａｓｏｆｔｈｅｓｅｍｉｃｏｎｄｕｃｔｏｒ...
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| 收稿时间： | 1998-02-16 |
Turn on Delay of Semiconductor Lasers and Accompanying Time Evolution of Carriers |
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| WANG Jialing. Turn on Delay of Semiconductor Lasers and Accompanying Time Evolution of Carriers[J]. 中国激光(英文版), 1998, 7(4): 308-312 |
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| Authors: | WANG Jialing |
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| Abstract: | A closed expression describing the time evolution of the carrier density within the turn on period of a semiconductor laser has been derived for the case that the Auger effect is considered with a term proportional to the cube of the carrier density. As a result, an explicit analytical expression for the turn on delay of the diode laser has also been deduced. |
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| Keywords: | semiconductor laser Auger effect turn on delay time evolution of carrier density |
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