| 读出电路铟柱打底层对铟柱成球高度的影响 |
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| 引用本文： | 谢珩,梁宗久,杨雅茹. 读出电路铟柱打底层对铟柱成球高度的影响[J]. 激光与红外, 2011, 41(1): 63-66 |
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| 作者姓名： | 谢珩 梁宗久 杨雅茹 |
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| 作者单位： | 华北光电技术研究所,北京,100015 |
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| 摘 要： | 针对超大规模红外探测器读出电路铟柱成球后高度过低导致倒装互连难度增加这一问题，设计了试验，并分析讨论了读出电路铟柱打底层（UBM）形状对铟柱成球高度的影响。得出了铟球高度与铟柱尺寸和铟柱生长高度成正比，与读出电路铟柱打底层尺寸成反比，并提出了进一步增加铟球高度的思路。
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| 关 键 词： | 红外探测器；读出电路；打底层；铟柱 |
Effect of UBM of ROIC on indium bump height |
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| XIE Heng,LIANG Zong-jiu,YANG Ya-ru. Effect of UBM of ROIC on indium bump height[J]. Laser & Infrared, 2011, 41(1): 63-66 |
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| Authors: | XIE Heng LIANG Zong-jiu YANG Ya-ru |
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| Affiliation: | North China Research Institute of Electro-optics,Beijing 100015,China |
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| Abstract: | It had difficulty in flip chip bonding cause the indium bump height of ROIC was too low in large IRFPAs.We die an experiment upon dimension of UBM and analyzed its influence on indium bump height.The indium bump height of ROIC is in direct proportion to the indium bump size and film thickness,but in inverse proportion to the UBM size of ROIC.To solve the problem,an improved thread of research thoughts is presented in this paper. |
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| Keywords: | infrared detector ROIC UBM indium bump |
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