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Phonons in Ge/Si quantum dot structures: influence of growth temperature |
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| Authors: | A. G. Milekhin A. I. Nikiforov M. Yu. Ladanov O. P. Pchelyakov D. N. Lobanov A. V. Novikov Z. F. Krasil'nik S. Schulze D. R. T. Zahn |
| Affiliation: | a Institute of Semiconductor Physics, Lavrentjev av.13, Novosibirsk 630090, Russia;b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod 603950, Russia;c Institut für Physik, Technische Universität Chemnitz, D-09107, Chemnitz, Germany |
| Abstract: | In this paper we present the results of a Raman study of Ge/Si quantum dot (QD) superlattices grown with different thicknesses of a Si interlayer and at different substrate temperatures. The built-in strain and atomic intermixing in the QDs are deduced from an analysis of optical phonon frequencies of the QDs obtained from Raman spectra of the structures. |
| Keywords: | Author Keywords: Raman spectroscopy Phonons Quantum dots Confinement |
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