| 基板支撑梢对TFT栅界面SiN_x和a-Si成膜特性的影响 |
| |
| 引用本文： | 王守坤,孙亮,郝昭慧,朱夏明,袁剑峰,林承武.基板支撑梢对TFT栅界面SiN_x和a-Si成膜特性的影响[J].液晶与显示,2012,27(5):613-617. |
| |
| 作者姓名： | 王守坤 孙亮 郝昭慧 朱夏明 袁剑峰 林承武 |
| |
| 作者单位： | 北京京东方显示技术有限公司,北京,100176 |
| |
| 摘 要： | 采用等离子体增强化学气相沉积法(PECVD)制得氮化硅和氢化非晶硅薄膜,对PECVD设备中基板支撑梢区域的膜质进行了研究。结果显示基板支撑梢对氮化硅薄膜的影响是:基板支撑梢区域的膜厚(沉积速率)高于非基板支撑梢区域,氢含量及SiH/NH]值高于非基板支撑梢;对氢化非晶硅薄膜的影响是:基板支撑梢区域的膜厚(沉积速率)小于非基板支撑梢区域,氢含量高于非基板支撑梢。并对成膜影响的机理进行了分析讨论。
|
| 关 键 词： | 等离子体增强化学气相沉积法 基撑梢 氮化硅膜 氢化非晶硅膜 傅里叶红外分析 |
| 收稿时间： | 2012/5/23 |
Pin Effect on SiN_x and a-Si Layer of Thin Film Transistor |
| |
| WANG Shou-kun
,
SUN Liang
,
HAO Zhao-hui
,
ZHU Xia-ming
,
YUAN Jian-feng
,
LIN Cheng-wu.Pin Effect on SiN_x and a-Si Layer of Thin Film Transistor[J].Chinese Journal of Liquid Crystals and Displays,2012,27(5):613-617. |
| |
| Authors: | WANG Shou-kun SUN Liang HAO Zhao-hui ZHU Xia-ming YUAN Jian-feng LIN Cheng-wu |
| |
| Institution: | (Process Development Department,BOE Display Technology Co.Ltd., Beijing 100176,China) |
| |
| Abstract: | Silicon nitride thin films(SiNx) and hydrogenated amorphous silicon(a-Si∶H)thin films were deposited by plasma enhanced chemical vapor deposition(PECVD)method.The effect of the PECVD pin on thin films was studied.The results show that SiNx thin films: thickness(dep.rate) about pin area is larger than that in no-pin area’s;hydrogen content and SiH/NH] about pin area is higher than that in no pin area’s.However,a-Si∶H thin films: thickness(dep.rate) about pin area is thinner than that in no pin area’s;hydrogen content about pin area is higher than in no pin area’s.The growth mechanism of thin films was discussed. |
| |
| Keywords: | PECVD silicon nitride thin films hydrogenated amorphous silicon(a-Si∶H)thin films FTIR |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
|
