Indium bound exciton luminescence in silicon

A high-resolution photoluminescence study is presented of the bound exciton line and its 4 meV low energy satellite in Si:In. The excitation and temperature dependence and the decay times suggest that the satellite line originates from the decay of an exciton bound to the indium acceptor. We tentatively correlate this line with excitations of the final state indium acceptors into a vibrational excited level.