Localization of the Fe°-level in silicon

Silicon samples were quenched from 1250°C – 1300°C and the 95K Fermi level was calculated from Hall effect data. The same samples were used to determine the intensity of the EPR spectrum at 95K associated with the iron interstitial (Fe°). In carefully selected samples, complete or partial overlapping of temperature dependent Hall measurements and EPR spectra could be accomplished. By relating Fermi levels to the corresponding EPR signals it was found that the transition Fe° → Fe⁺ in silicon introduces a level located at E_v+0, 375eV.