Auger recombination of electron-hole drops |
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Authors: | A Haug |
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Institution: | II. Institut für Theorestische Physik, Technische Universität, Berlin, D1000 Berlin 12, Straβe des 17. Juni 135, W. Germany |
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Abstract: | Phonon-assisted Auger recombination is calculated for indirect band gap semiconductors in the strongly degenerate case. It follows a reciprocal lifetime τ?1=Cn2 with C=7.19×1031 cm6 sec?1 for Si and C=2.94× 10?31 cm6 sec?1 for Ge. These results are in good agreement with experimental values of the decay of electron-hole drops. Therefore one can conclude that phonon-assisted Auger recombination is the essential nonradiative recombination process in this case. |
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