Effects of annealing on localized states in amorphous Ge films |
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Authors: | S. Hasegawa M. Kitagawa |
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Affiliation: | Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan |
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Abstract: | Annealing behaviors of the activation energy for the electrical conduction Eσ, that for the thermoelectric power Es, the optical gap Eoptg, and the spin density in evaporated amorphous Ge are investigated. Eσ is independent of Es and Eoptg, and the rates of variation of Eoptg and Es with annealing temperature are connected by △Eoptg = 2.5△Eopts. It is suggested that the position of the Fermi level does not change with annealing in contrast with amorphous Si, and the edge of the localized tail state shifts with annealing. |
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