Electron-hole droplets in strained Ge and Si |
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Authors: | L Liu |
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Institution: | Department of Physics, Northwestern University, Evanston, IL 60201, U.S.A. |
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Abstract: | The effect of the non-parabolicity of the valence band on the electron-hole droplets in Si and Ge under a large uniaxial stress is discussed. It is found that this stress-induced band feature helps to lower the ground state energy of the droplet relative to that of the free excitons. |
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