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Uniaxial stress measurements on n-type GaAs
Authors:C.N. Ahmad  A.R. Adams
Affiliation:Department of Physics, University of Surrey Guildford, Surrey, U.K.
Abstract:Measurement of the influence of 〈100〉 stress on the low-field resistivity of n-type GaAs shows a linear change to 10 k-bar and no influence of the X1c minima. This removes the apparent discrepancy between high-stress and electro-reflectance data for the conduction band structure of GaAs.
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