Structural dependence of electrical properties of Ge films prepared by RF magnetron sputtering |
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| Authors: | Chao-Yang Tsao Johnson Wong Jialiang Huang Patrick Campbell Dengyuan Song Martin A. Green |
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| Affiliation: | (1) Engineering Research Center for Nanophotonics & Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, North Zhongshan Rd. 3663, Shanghai, 200062, People’s Republic of China;(2) State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, People’s Republic of China;(3) Advanced Materials Technology Centre, Singapore Polytechnic, 500 Dover Rd., Singapore, 139651, Singapore; |
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| Abstract: | This paper investigates the electrical properties of non-hydrogenated and hydrogenated germanium thin films deposited on silicon nitride coated glass in order to develop a material for the bottom cells of low cost monolithic tandem solar cells. Films were deposited by RF magnetron sputtering over a series of substrate temperatures up to 500°C. A structure-dependent conduction property of germanium films was found. As the substrate temperature increased from 255 to 400°C, both series of films first showed n-type conductivity with progressively increasing room-temperature dark resistivity that peaks around the type switch. Upon attaining p-type character the resistivity decreased rapidly with further increase in T s. Accompanying these trends, the film grain orientation evolved from predominantly (220) to (111). |
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