Control of the tunnel current flowing though nonuniform heterogeneous barriers with spherically symmetric inclusions |
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| Authors: | V A Kozlov V A Verbus |
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| Institution: | 1. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia
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| Abstract: | The effect of spherical quantum objects (scatterers) embedded into semiconductor barriers on the tunnel current flowing through them has been studied. For this purpose, the problem of the scattering of incident and reflected wave functions (damping if their energy is less than the barrier potential) of the electron by the stepwise spherically symmetric scattering potential has been solved. |
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