Physical and electrical properties of chemical vapor grown GaN Nano/microstructures |
| |
Authors: | Li Jianye Liu Jie Wang Lung-Shen Chang Robert P H |
| |
Institution: | Materials Science and Engineering Department and Materials Research Center, Northwestern University, Evanston, Illinois 60208, USA. jianye-li@northwestern.edu |
| |
Abstract: | Wurtzitic gallium nitride nano- and microleaves were controlled grown through a facile chemical vapor deposition method. This is the first report of GaN nanoleaves, a new morphology of GaN nanostructures. The as-grown GaN structures were characterized by means of X-ray powder diffraction, scanning electron microscopy, energy dispersive X-ray, transmission electron microscopy, and selected area electron diffraction. Raman scattering spectra of the GaN leaves were studied. Field effect transistors based on individual GaN nanoleaves were fabricated, and the electrical transport results revealed a pronounced n-type gating effect of the GaN nanostructures. |
| |
Keywords: | |
本文献已被 PubMed 等数据库收录! |
|