| 基于变化电子流向的一种高压VDMOS静态物理模型 |
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| 引用本文： | 鲍嘉明,时龙兴,孙伟锋,赵野,陆生礼.基于变化电子流向的一种高压VDMOS静态物理模型[J].固体电子学研究与进展,2007,27(4):452-456. |
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| 作者姓名： | 鲍嘉明 时龙兴 孙伟锋 赵野 陆生礼 |
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| 作者单位： | 东南大学国家专用集成电路系统工程技术研究中心,南京,210096;东南大学国家专用集成电路系统工程技术研究中心,南京,210096;东南大学国家专用集成电路系统工程技术研究中心,南京,210096;东南大学国家专用集成电路系统工程技术研究中心,南京,210096;东南大学国家专用集成电路系统工程技术研究中心,南京,210096 |
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| 基金项目： | 国家高技术研究发展计划(863计划) |
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| 摘 要： | 研究了高压VDMOS内部电子流向的变化,提出了其近似解析表达式,在此基础之上,求得了电子密度分布变化的解析表达式,从而建立了高压VDMOS的一种改进静态物理模型。计算结果表明,由于这一模型是基于更为合理的电子流向变化和电子密度分布变化的解析表达式而建立的,所以与Yeong-seuk Kim等人模型和参考文献2]的模型相比,在较大的工作电压范围内,其计算精度的提高都是非常显著的。
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| 关 键 词： | 垂直双扩散金属氧化物半导体场效应晶体管 电子流向 电子密度分布 静态物理模型 |
| 文章编号： | 1000-3819（2007）04-452-05 |
| 收稿时间： | 2007-01-08 |
| 修稿时间： | 2007-04-23 |
A Steady State Physical Model Based on the Varied Electron Flow Direction for High-voltage VDMOS |
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| BAO Jiaming,SHI Longxing,SUN Weifeng,ZHAO Ye,LU Shenli.A Steady State Physical Model Based on the Varied Electron Flow Direction for High-voltage VDMOS[J].Research & Progress of Solid State Electronics,2007,27(4):452-456. |
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| Authors: | BAO Jiaming SHI Longxing SUN Weifeng ZHAO Ye LU Shenli |
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| Abstract: | In the paper, the variation of the electron flow direction is studied, and its analytical formula is presented approximately. Furthermore, an analytical formula based on it is obtained for the variation of the electron concentration distribution. Consequently an improved steady-state physical model for high-voltage VDMOS is proposed. The calculation results show that because the proposed model is based on the more proper analytical formulas for both the variation of the electron flow direction and the variation of the electron concentration distribution, it is more accurate than both the model of Yeong-seuk Kim et al and the model of ref. 2] within a wide range of operating voltage. |
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| Keywords: | VDMOS electron flow direction electron concentration distribution steadystate physical model |
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