A systematic investigation of the role of material parameters in metastability of hydrogenated amorphous silicon

In this work, the role of structural, electronic and optical parameters of as-deposited amorphous silicon films in photoconductivity decay during light soaking was systematically investigated. Deposition temperature was varied in the range 130–270°C, in order to obtain samples with different structural, optical and electronic properties. As a result, two degradation regimes were identified. At short illumination times (within a few days in typical samples, and within a few hours in the low quality samples), the material showed different tendency to degradation depending on the content of the SiH bond clusters. At long illumination times, in all the light soaked samples the photoconductivity decay followed the t^−1/3 law. The measured photoconductivity degradation was simulated starting from the bond-breaking model. The observed correlation between the material structural parameters and the different tendencies to degradation is explained in terms of variations of the Staebler-Wronski susceptibility.