Magnetic and electric properties of (Fe,Co)/(Si,Ge) multilayers |
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Authors: | Tadeusz Lucinski Piotr Chomiuk |
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Institution: | (1) Laboratoire Charles Fabry de l’Institut d’Optique, CNRS, Univ. Paris Sud, Campus Polytechnique, RD128, 91127 Palaiseau Cedex, France;(2) Institut des NanoSciences de Paris, Campus Boucicaut, 140 rue de Lourmel, 75015 Paris, France |
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Abstract: | We review selected results concerning the interlayer exchange coupling in Fe/Si
x
Fe1−x
, Fe/Ge and Co/Si layered structures. Among the ferromagnet/semiconductor systems, Fe/Si structures are the most popular owing
to their strong antiferromagnetic interlayer coupling. We show that such interaction depends not only on semiconducting sublayer
thickness, but also on deposition techniques and on the chemical composition of the sublayer as well. In similar heterostructures
e.g. Fe/Ge, antiferromagnetic coupling was observed only in ion-beam deposited trilayers at low temperatures. In contrast,
in Fe/Ge multilayers deposited by sputtering, no such coupling was found. However, when the Ge is partially substituted by
Si, antiferromagnetic interlayer coupling appears. For Co/Si multilayers, we observed a very weak exchange coupling and its
oscillatory behavior. The growth of Co on Si occurs in an island growth mode. The evolution of magnetic loop shapes can be
successfully explained by the interplay between interlayer coupling and anisotropy terms. |
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Keywords: | |
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