Monte Carlo Modeling of Phonon-assisted Carrier Transport in Cubic and Hexagonal Gallium Nitride |
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Authors: | R Brazis R Raguotis |
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Institution: | (1) Semiconductor Physics Institute, A. Goštauto g. 11, LT-01108 Vilnius, Lithuania |
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Abstract: | Monte Carlo method is employed for the calculations of electron and hole transport characteristics of cubic and hexagonal
GaN at T = 300 K in the fields of E ≤ 1000 kV/cm−1. It is shown that electron drift velocity and mobility is heavily reduced in hexagonal crystals due to additional phonon
modes (~ 26 meV) and by fast electron scattering between the lowest Γ1 valley and the minimally (~ 400 meV) up-shifted Γ3 valley. Intervalley scattering is mediated most efficiently by the low-energy (~ 2 meV) acoustic phonons. The randomizing
scattering is even more pronounced in p-type crystals where the sub-bands of light and heavy holes merge at the Γ-point of Brillouin zone. Cubic phase crystals are
concluded to be advantageous for ultrafast electronic and photonics device performance because electron drift mobility is
higher by an order of magnitude, and the hole mobility is several times higher than those in hexagonal phase. |
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Keywords: | average energy band population drift velocity electron and hole mobility GaN phonons p− n diode |
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