| Abstract: | Schottky diodes, fabricated by local in diffusion of indium onto p-type single crystals of CuIn0.8Ga0.2Se2 have been shown to exhibit space-charge-limited current effects under forward bias. Two regions are clearly observed in the current-voltage characteristics of the device; the first one associated with the saturation-velocity regime and the second region that corresponds to the ballistic regime with a V3/2 dependence (Child-Langmuir law). The observed characteristic was used to calculate the semiconductor potential (Ei ≈︂ 0.15 eV). By means of photovoltaic effects the barrier height (φB ≈︂ 0.74 eV) and the ideality factor (n = 1.7) of the diode were also obtained. |
