A thermal desorption study of thiophene adsorbed on the clean and sulfided Mo(100) crystal face |
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Authors: | A.J. Gellman M.H. Farias M. Salmeron G.A. Somorjai |
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Affiliation: | Lawrence Berkeley Laboratory, Materials and Molecular Research Division and Department of Chemistry, University of California, Berkeley, California 94720, USA |
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Abstract: | The adsorption of thiophene (C4H4S) on the clean and sulfided Mo(100) crystal surface has been studied. A fraction of the adsorbed thiophene desorbs molecularly while the remainder decomposes upon heating, evolving H2 and leaving carbon and sulfur deposits on the surface. The reversibly adsorbed thiophene exhibits three distinct desorption peaks at 360, 230–290 and 163–174 K, corresponding to binding energies of 22, 13–16 and 7–9 kcal/mol respectively. Sulfur on the Mo(100) surface preferentially blocks the highest energy binding state and causes an increase in the amount of thiophene bound in the low binding energy, multilayer state. The thiophene decomposition reactions yield H2 desorption peaks in the temperature range 300–700 K. We estimate that 50–66% of the thiophene adsorbed to the clean Mo(100) decomposes. The decomposition reaction is blocked by the presence of c(2 × 2) islands of sulfur and is blocked completely at θs = 0.5, at which point thiophene adsorption is entirely reversible. |
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