Refractive index of silicon oxide surface films determined by polarization method of photomagnetoelectric investigation

The polarization method of photomagnetoelectric investigation was used for determining values of refractive indexes of SiO₂ surface layers. This method of investigation is complementary to ellipsometry. It is based on measurements of intensity of variously polarized radiation which enters semiconductor sample through the investigated surface layer. The SiO₂ layers were obtained by thermal oxidation of 〈111〉 and 〈100〉 oriented silicon in different gases