Photoresponse at the semiconductor-electrolyte junction: Influence of the space charge region width

By varying the potential applied to a semiconductor-electrolyte junction its spectral response is modified. The definition of a reduced parameter from the ratio between two spectral responses at two different potentials is achieved. A quantitative analysis of the behaviour of the illuminated junction is then possible, as well as a comparison with the theoretical Gärtner model without the knowledge of the incident photon flux. The experimental support is provided by the n-GaP-1M HClO₄ junction where the semiconductor presents an indirect and a direct energy transition. Thus a spectral region is determined where the Gärtner model and the experimental spectrum coincide and a value of the minority carrier diffusion length (L=0.31μm) is deduced.