Room temperature adsorption and growth of Ga and In on cleaved Si(111) |
| |
Authors: | D Bolmont P Chen CA Sébenne F Proix |
| |
Institution: | Laboratoire de Physique des Solides, associé au CNRS, Université Pierre et Marie Curie, F-75230 Paris Cedex 05, France |
| |
Abstract: | Low energy electron diffraction (LEED), Auger electron spectroscopy (AES) and photoemission yield spectroscopy (PYS) measurements have been performed on a set of ultrahigh vacuum cleaved Si(111) surfaces with different bulk dopings as a function of Ga or In coverage θ. The metal layers are obtained by evaporation on the unheated substrate and θ varies from zero to several monolayers (ML). First, the 2×1 reconstruction of the clean substrate is replaced by a R30° structure at ML, meanwhile the dangling bond peak at 0.6 eV below the valence band edge Evs is replaced by a peak at 0.1 eV for Ga or 0.3 eV for In, below Evs. At the same time, the ionization energy decreases by 0.4 eV (Ga) or 0.6 eV (In), while the Fermi level pinning position gets closer to the valence band edge by about 0.1eV. Upon increasing θ, new LEED structures develop and the electronic properties keep on changing slightly before metallic islands start to grow beyond θ ~1 ML. |
| |
Keywords: | |
本文献已被 ScienceDirect 等数据库收录! |
|