AES,photoemission and work function study of the deposition of Cs on (100) and (111)B GaAs epitaxial layers

Work function, photoemission and AES measurements have been made on (100) and (111)B epitaxial GaAs layers as a function of caesium coverage. It has been shown that the photoemission maximum and work function minimum occur at a coverage of $\text{2}\text{3}$ of a monolayer. The reduction of the work function takes place in distinct stages with changes in the rate of fall occurring at $\text{1}\text{8}$ and $\text{1}\text{2}$ of a monolayer for the (111)B face and $\text{1}\text{8}$, $\text{1}\text{4}$, $\text{1}\text{3}$ and $\text{1}\text{2}$ of a monolayer for the (100) face. This indicates the presence of specific adsorption sites which have not been observed in previous work on these faces.