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一种用于半并行A/D转换器的比较器设计
引用本文:徐鸣远,周述涛,朱璨,沈晓峰.一种用于半并行A/D转换器的比较器设计[J].微电子学,2010,40(2).
作者姓名:徐鸣远  周述涛  朱璨  沈晓峰
作者单位:中国电子科技集团公司,第二十四研究所,重庆,400060;模拟集成电路国家级重点实验室,重庆,400060
摘    要:简要介绍了半并行结构的A/D转换器原理。针对该结构的A/D转换器,提出了一种能自动校零、迟滞、全差分输入及多级前置放大的比较器。解决了输入失调电压、噪声环境下单转换、电荷注入、带宽、转换速度等问题。给出了应用该比较器的0.6μm CMOS半并行A/D转换器的性能。结果表明,设计的比较器能使丰并行ADC的DNL和INL小于±0.5 LSB,SNR大于48dB。

关 键 词:半并行  A/D转换器  自动校零  迟滞比较器  

Design of a Comparator for Half-Flash A/D Converter
XU Mingyuan,ZHOU Shutao,ZHU Can,SHEN Xiaofeng.Design of a Comparator for Half-Flash A/D Converter[J].Microelectronics,2010,40(2).
Authors:XU Mingyuan  ZHOU Shutao  ZHU Can  SHEN Xiaofeng
Institution:Sichuan Institute of Solid-State Circuits/a>;CETC/a>;Chongqing 400060/a>;P.R.Chnia/a>;National Laboratory of Analog Integrated Circuits/a>;P.R.Chnia
Abstract:Theory of operation of A/D converter with half-flash structure was described. A multi-stage pre-amp comparator with auto-zero, hysteresis and fully differential input was proposed for half-flash A/D converter. Problems of input offset voltage, single conversion in noise environment, charge injection, bandwidth and conversion rate were solved. A half-flash A/D converter was fabricated in 0.6 μm CMOS process. Test results showed that the A/D converter had a DNL/INL less than ±0.5 LSB and an SNR more than 48 dB.
Keywords:Half-flash  A/D converter  Auto-zero  Hysteretic comparator  
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