Pd-Si薄膜固相反应的透射电子显微镜研究

本工作利用透射电子显微术研究了Pd-Si薄膜固相反应的初始生成相及生成相Pd₂Si与(111)取向Si衬底的取向关系随Pd膜厚度、退火温度等因素的变化规律。实验结果表明:在衬底保持室温的条件下,Pd沉积到Si(111)上时也能够生成一层外延的Pd₂Si,其厚度足以在常规的选区电子衍射中产生明显的信号。在170℃退火时,Pd-Si反应即可持续到生成200nm厚的外延的Pd₂Si。在Pd膜厚度为400nm的条件下,Pd₂Si与Si(111)衬底的取向关系为0001]_(Pd2Si)轴织构。 关键词：

A TEM STUDY OF Pd-Si THIN FILM SOLID-PHASE REACTION

The initial silicide formation during the deposition of Pd to room-temperature Si (111) substrate and the dependence of Pd₂Si-Si orientation relationship on Pd film thickness have been studied by TEM. The results show that the only silicide phase formed is Pd₂Si under annealing temperature from 170℃ to 600℃. A thin layer of Pd₂Si has grown without annealing, even when the substrate is kept in room-temperature. The Pd film thinner than 100 nm leads to epitaxial Pd₂Si layer on Si (111), while the Pd film of about 400 nm gives the 0001] Pd₂Si fiber texture. Various kinds of defect with high density exist in the silicide film and the interface.