|
|||||
|
|
Excitation intensity dependence of lateral photocurrent in InGaAs/GaAs dot-chain structures |
|
| Authors: | S.L. Golovynskyi Yu.I. Mazur Zh.M. Wang M.E. Ware O.V. Vakulenko G.G. Tarasov G.J. Salamo |
| Affiliation: | 1. Institute of Semiconductor Physics, National Academy of Sciences, pr. Nauki 45, 03028 Kyiv, Ukraine;2. Institute for Nanoscience & Engineering, University of Arkansas, Fayetteville, AR 72701, USA;3. Taras Shevchenko National University of Kyiv, 64 Volodymyrs''ka St., 01601 Kyiv, Ukraine |
| Abstract: | Optical properties of multi-layer InxGa1 − xAs/GaAs dot-chain heterostructures are studied by means of lateral photoconductivity (PC). Effects of carrier generation and recombination on the photoresponsivity of deep defects and quantum dot arrays are considered. It is shown that the radiative recombination significantly affects the lateral PC spectra thus leading to a nonlinear dependence of photocurrent on excitation intensity. For ground state excitation of the quantum dots the photocurrent nonlinearities are determined by a competition of both generation and recombination processes which include thermal activation. |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ | |