Electrical control of valley and spin polarized current and tunneling magnetoresistance in a silicene-based magnetic tunnel junction |
| |
| Authors: | Dali Wang Guojun Jin |
| |
| Affiliation: | 1. Department of Physics and Center for Nano Science and Technology, Anhui Normal University, Wuhu, 241000, China;2. National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing, 210093, China |
| |
| Abstract: | We investigate the electronic transport in a silicene-based ferromagnetic metal/ferromagnetic insulator/ferromagnetic metal tunnel junction. The results show that the valley and spin transports are strongly dependent on local application of a vertical electric field and effective magnetization configurations of the ferromagnetic layers. In particular, it is found that the fully valley and spin polarized currents can be realized by tuning the external electric field. Furthermore, we also demonstrate that the tunneling magnetoresistance ratio in such a full magnetic junction of silicene is very sensitive to the electric field modulation. |
| |
| Keywords: | Silicene Magnetic tunnel junction Valley polarization Spin polarization Vertical electric field |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
