camoo4薄膜的恒电位阳极氧化法制备及表征

camoo4薄膜;恒电位;阳极氧化; 制备;表征

Preparation of CaMoO4 Thin Film by Potentiostatic Anode Oxidation Method and Characterization

In saturated Ca(OH)2 solutions,CaMoO4 thin films with scheelite structure were prepared by potentiostatic anode oxidation method.The influence of solution acidity and the method of substrate pretreatment on the film growth as well as the change of current during the deposition were studied,and the crystal phase structure,surface morphology,chemical compositions as well as photoluminescence at room temperature were investigated by XRD,SEM,XPS and FA(fluorescence analysis),respectively.The results revealed that the grain growth was more complete for the CaMoO4 films deposited on polished substrate,and the grain size was larger and the photoluminescence at room temperature better than that of CaMoO4 films deposited on the substrate etched by mixture acids.When the solution pH exceeded 12.30,cluster growth of the grains was observed.Therefore,it is better to prepare CaMoO4 films by potentiostatic anode oxidation method on polished substrate,and to control the solution pH at about 12.00.