| Abstract: | The density of states effective mass of the valence band and impurity parameters in p-ZnSiAs2 were determined from the temperature dependence of the Hall coefficient. The density of states effective mass of holes in ZnSiAs2 is (0.21 ± 0.03) m0. Three acceptor levels located at 15 meV, 40 meV and 200 meV upper the valence band edge were found. A mobility analysis was carried out taking into account the interaction of the current carriers with the large number of longitudinal optical branches existing in chalcopyrite structure. The experimental values are in good accordance with the theoretical mobility curves in the temperature range from 77 K up to 600 K. |
