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Growth and field emission properties of globe-like diamond microcrystalline-aggregate |
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| Authors: | Jin-hai Gao Lan Zhang Haoshan Hao |
| Institution: | a Department of Physics, Zhengzhou Teachers College, Zhengzhou 450044, China b Department of Engineering Mechanics, Zhengzhou University, Zhengzhou 450002, China c Departent of Mathematical and Physical Sciences, Henan Institute of Engineering, Zhengzhou 451191, China |
| Abstract: | The globe-like diamond microcrystalline-aggregates were fabricated by microwave plasma chemical vapor deposition (MPCVD) method. The ceramic with a Ti mental layer was used as substrate. The fabricated diamond was evaluated by Raman scattering spectroscopy, X-ray diffraction spectrum (XRD), and scanning electron microscope (SEM). The field emission properties were tested by using a diode structure in a vacuum. A phosphor-coated indium tin oxide (ITO) anode was used for observing and characterizing the field emission. It was found that the globe-like diamond microcrystalline-aggregates exhibited good electron emission properties. The turn-on field was only 0.55 V/μm, and emission current density as high as 11 mA/cm2 was obtained under an applied field of 2.9 V/μm for the first operation. The growth mechanism and field emission properties of the globe-like diamond microcrystalline-aggregates are discussed relating to microstructure and electrical conductivity. |
| Keywords: | Diamond microcrystalline-aggregate Field emission Chemical vapor deposition |
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