Electrical and optical properties of ZnO films grown by molecular beam epitaxy |
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Authors: | SP Wang CX Shan B Yao JY Zhang DZ Shen |
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Institution: | a Key Lab of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China b Graduate School of the Chinese Academy of Sciences, Beijing 100049, China |
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Abstract: | Zinc oxide (ZnO) films have been grown on sapphire by molecular beam epitaxy (MBE), and it is found that the grain size of the ZnO films increased with increasing the growth temperature. Photoluminescence (PL) study shows that the intensity ratio of near-band-edge emission to deep-level-related emission (NBE/DL) of the ZnO is significantly enhanced with increasing the growth temperature, and the dependence of the carrier mobility on the growth temperature shows very similar trend, which implies that there is a community factor that determines the optical and electrical properties of ZnO, and this factor is suggested to be the grain boundary. The results obtained in this paper reveal that by reducing the grain boundaries, ZnO films with high optical and electrical properties may be acquired. |
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Keywords: | 61 72 Mm 72 80 Ey 73 61 Ga 78 55 Et |
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