Influence of direct current plasma magnetron sputtering parameters on the material characteristics of polycrystalline copper films |
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Authors: | Kah-Yoong Chan Pei-Qing Luo Teck-Yong Tou |
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Institution: | a Thin Film Laboratory, Faculty of Engineering, Multimedia University, Jalan Multimedia, 63100 Cyberjaya, Selangor, Malaysia b Department of Physics, Shanghai Jiao Tong University, 800 Dongchuan Road, 200240 Shanghai, PR China |
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Abstract: | Physical vapor processes using glow plasma discharge are widely employed in microelectronic industry. In particular magnetron sputtering is a major technique employed for the coating of thin films. This paper addresses the influence of direct current (DC) plasma magnetron sputtering parameters on the material characteristics of polycrystalline copper (Cu) thin films coated on silicon substrates. The influence of the sputtering parameters including DC plasma power and argon working gas pressure on the electrical and structural properties of the thin Cu films was investigated by means of surface profilometer, four-point probe and atomic force microscopy. |
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Keywords: | 68 55 &minus a 81 15 Cd |
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