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Effects of buffer layer annealing temperature on the structural and optical properties of hydrothermal grown ZnO |
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| Authors: | XQ Zhao JY Lee CM Shin JH Chang CS Son WG Jung JL Zhao |
| Institution: | a Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749, Republic of Korea b Major of Nano Semiconductor, Korea Maritime University, #1 Dongsam-dong, Yeongdo-Ku, Busan 606-791, Republic of Korea c Department of Mechatronics Engineering, Korea Maritime University, #1 Dongsam-dong, Yeongdo-Ku, Busan 606-791, Republic of Korea d Department of Electronic Materials Engineering, Silla University, Gwaebeop-dong, Sasang-gu, Busan 617-736, Republic of Korea e Department of Nano Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714, Republic of Korea f School of Advanced Materials Engineering, Kookmin University, 861-1 Jeongneung-dong, Seongbuk-gu, Seoul 136-702, Republic of Korea g Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685, Singapore h School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore |
| Abstract: | ZnO was deposited on bare Si(1 0 0), as-deposited, and annealed ZnO/Si(1 0 0) substrates by hydrothermal synthesis. The effects of a ZnO buffer layer and its thermal annealing on the properties of the ZnO deposited by hydrothermal synthesis were studied. The grain size and root mean square (RMS) roughness values of the ZnO buffer layer increased after thermal annealing of the buffer layer. The effect of buffer layer annealing temperature on the structural and optical properties was investigated by photoluminescence, X-ray diffraction, atomic force microscopy, and scanning electron microscopy. Hydrothermal grown ZnO deposited on ZnO/Si(1 0 0) annealed at 750 °C with the concentration of 0.3 M exhibits the best structural and optical properties. |
| Keywords: | 81 05 Dz 81 16 Be 81 40 Ef |
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