Luminescence spectra of hexagonal forms of silicon carbide in mosaic films grown by solid-state epitaxy

The luminescence spectra of silicon carbide films grown on silicon by solid-state epitaxy have been studied. It has been shown that, depending on the growth conditions, one can obtain films of different SiC polytypes, including the cubic and hexagonal ones. In many cases, the films thus grown display a mixture of various polytypes, but it is possible to prepare films of predominantly hexagonal symmetry (the coexistence of the 4H and 2H hexagonal phases, which are close in properties, is also possible). It thus has been demonstrated that the silicon carbide films grown on silicon by solid-state epitaxy are promising for application as damping layers in fabrication of wide-band-gap hexagonal semiconductors on silicon substrates.