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Realizing a stable magnetic double-well potential on an atom chip

Authors:	Email author" target="_blank">J?Estève Email author T?Schumm J-B?Trebbia I?Bouchoule A?Aspect C I?Westbrook

Institution:	(1) Laboratoire Charles Fabry de l’Institut d’Optique, UMR 8501 du CNRS, 91403 Orsay Cedex, France

Abstract:	We discuss design considerations and the realization of a magnetic double-well potential on an atom chip using current-carrying wires. Stability requirements for the trapping potential lead to a typical size of order microns for such a device. We also present experiments using the device to manipulate cold, trapped atoms.

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